具有 BFU730F 應用
電路的 2.4 - 5.9GHz
寬帶 Wi-Fi LNA。 BFU730F 是一款分立 HBT,采用先進的 110 GHz SiGe:C BiCmos 工藝生產。 SiGe:C是一種普通的硅鍺工藝,在NPN
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說明
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2.4 - 5.9GHz Broadband Wi-Fi LNA With BFU730F Application Circuit. The BFU730F is a discrete HBT that is produced using advanced 110 GHz, SiGe:C BiCmos process. SiGe:C is a normal silicon germanium process with the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in the base layer suppresses the boron diffusion during wafer processing
主要特色
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Operating Frequency
2400 to 5900 MHz
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Output Power
16.8 dBm
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Gain
20.9 dB